| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a laminated SOI substrate for removing an oxide film remaining at a terrace part without undercutting a buried oxide film and to provide a method for manufacturing it. SOLUTION: A wafer 10 for an active layer of a laminated wafer 30 is etched on its outer periphery, and only the neighborhood of a remaining part (a) of silicon oxide films 10a and 30a existing at the outer peripheral part of a terrace part is exposed, and almost the whole area of the exposed face of the laminate wafer 30 is coated with a resist film 40. Then, the remaining part (a) is etched with hydrofluoric acid solution, and the resist film 40 is dissolved with solvent, and the wafer 10 for the active layer is surface-ground and surface-sharpened to manufacture a laminate SOI substrate. Thus, it is possible to prevent generation of any undercut eroding the buried oxide film 10b buried between the SOI layer 10A and the wafer 20 for supporting a substrate toward the center of the radial direction of the wafer at the time of etching the remaining part. COPYRIGHT: (C)2004,JPO
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