发明名称 |
Transistor circuit with varying resistance lightly doped diffused regions for electrostatic discharge (ESD) protection |
摘要 |
A method of forming a transistor (70) in a semiconductor active area (78). The method forms a gate structure (G2) in a fixed relationship to the semiconductor active area thereby defining a first source/drain region (R1) adjacent a first gate structure sidewall and a second source/drain region R2) adjacent a second sidewall gate structure. The method also forms a lightly doped diffused region (801) formed in the first source/drain region and extending under the gate structure, wherein the lightly doped diffused region comprises a varying resistance in a direction parallel to the gate structure.
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申请公布号 |
US2004014293(A1) |
申请公布日期 |
2004.01.22 |
申请号 |
US20030622052 |
申请日期 |
2003.07.17 |
申请人 |
WU ZHIQIANG;SCOTT DAVID B. |
发明人 |
WU ZHIQIANG;SCOTT DAVID B. |
分类号 |
H01L21/336;H01L27/02;H01L29/06;H01L29/78;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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