发明名称 |
Method for producing an integrated circuit |
摘要 |
The invention relates to a method for producing an integrated circuit comprising the following steps: preparing a semi-conductor substract (1) with a contracting circuit area (SS); providing an insulating layer (IS) on the surface of the semi-conductor substrate (1): providing a contact hole (KL) in the insulating layer (IS) for making contacting the circuit area (SS); providing an insulating spacer area (10') in at least the area above the contact hole (KL); providing at least three trenches (BG1; BG2; BG3), the first (BG1) of which is arranged next to the contact hole (KL), a second (BG2) is disposed across the contact hole (KL) and a third (BG3) is next to the contact hole (KL). The spacer area (10') is placed between the first and second trench (BG1; BG2) and the second and the third trench (BG2; BG3); filling the trenches (BG1; BG2; BG3) with a conductive material: and chemical-mechanical polishing of conductive material for producing three seperated trenches (BL1; BL2; BL3).
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申请公布号 |
US2004014310(A1) |
申请公布日期 |
2004.01.22 |
申请号 |
US20030399985 |
申请日期 |
2003.04.23 |
申请人 |
HILLIGER ANDREAS;STAUB RALF;LUKEN EIKE |
发明人 |
HILLIGER ANDREAS;STAUB RALF;LUKEN EIKE |
分类号 |
H01L21/768;H01L21/60;H01L21/8242;H01L27/108;(IPC1-7):H01L21/476;H01L21/44 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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