发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 <p><P>PROBLEM TO BE SOLVED: To hardly release a sealing film from a surface of rewiring and an outer peripheral surface of a columnar electrode in a semiconductor device, such as a CSP or the like. <P>SOLUTION: Cupric oxide layers 19 are provided on the surface of the rewiring 17 made of copper and on the outer peripheral surface of the columnar electrode 18 made of copper. Thus, as compared with the case that there is no cupric oxide layer 19, the sealing film 20 made of an epoxy resin or the like can be made hardly releasing from the surface of the rewiring 17 and the outer peripheral surface of the columnar electrode 18. Incidentally, when a cuprous oxide layer is provided on the surface of the cupric oxide layer 19, the sealing layer 20 can be made further hardly released. <P>COPYRIGHT: (C)2004,JPO</p>
申请公布号 JP2004022699(A) 申请公布日期 2004.01.22
申请号 JP20020173700 申请日期 2002.06.14
申请人 CASIO COMPUT CO LTD 发明人 KONO ICHIRO;OKADA OSAMU
分类号 H01L23/52;H01L21/3205;H01L23/12;(IPC1-7):H01L23/12;H01L21/320 主分类号 H01L23/52
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