发明名称 MASK FOR TRANSFERRING PATTERN AND METHOD FOR JUDGING DEFACE ON MASK FOR TRANSFERRING PATTERN
摘要 <p><P>PROBLEM TO BE SOLVED: To take neccessary countermeasures in a pattern transferring with use of a mask by detecting variations in beam current resulting from deface and local breakage of the mask to be able to change areas for use of a main opening or replacing the mask in early stages. <P>SOLUTION: A dedicated opening (sub-openings 6A and 6B) for checking deface of the mask are provided separately from an opening (a main opening 5A) for performing a primary masking on a mask 5 for transferring patterns. A degree in deface of the main opening 5A is presumed by monitoring electron beam 6C passing through the sub-opening with a current measuring instrument 10 to determine if the main opening can perform the pattern transferring with sufficient accuracy. <P>COPYRIGHT: (C)2004,JPO</p>
申请公布号 JP2004022584(A) 申请公布日期 2004.01.22
申请号 JP20020171428 申请日期 2002.06.12
申请人 SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC 发明人 IWASAKI TERUO
分类号 G03F1/20;G03F1/84;H01J37/04;H01J37/09;H01J37/305;H01L21/027;(IPC1-7):H01L21/027;G03F1/16 主分类号 G03F1/20
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