发明名称 |
MASK FOR TRANSFERRING PATTERN AND METHOD FOR JUDGING DEFACE ON MASK FOR TRANSFERRING PATTERN |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To take neccessary countermeasures in a pattern transferring with use of a mask by detecting variations in beam current resulting from deface and local breakage of the mask to be able to change areas for use of a main opening or replacing the mask in early stages. <P>SOLUTION: A dedicated opening (sub-openings 6A and 6B) for checking deface of the mask are provided separately from an opening (a main opening 5A) for performing a primary masking on a mask 5 for transferring patterns. A degree in deface of the main opening 5A is presumed by monitoring electron beam 6C passing through the sub-opening with a current measuring instrument 10 to determine if the main opening can perform the pattern transferring with sufficient accuracy. <P>COPYRIGHT: (C)2004,JPO</p> |
申请公布号 |
JP2004022584(A) |
申请公布日期 |
2004.01.22 |
申请号 |
JP20020171428 |
申请日期 |
2002.06.12 |
申请人 |
SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC |
发明人 |
IWASAKI TERUO |
分类号 |
G03F1/20;G03F1/84;H01J37/04;H01J37/09;H01J37/305;H01L21/027;(IPC1-7):H01L21/027;G03F1/16 |
主分类号 |
G03F1/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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