发明名称 METHOD AND DEVICE FOR TREATING SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a method and a device for treating a substrate capable of controlling a pressure in a treating vessel by a rotating speed of a vacuum pump and capable of improving a through put of the treatment by reducing the time required for the whole substrate treatment. SOLUTION: The treatment is performed by continuously charging the substrate into the treating vessel 4 exhausted by the vacuum pump 8. The substrate is treated by keeping the treating vessel 4 in a first pressure by operating the vacuum pump 8 in a first rotating speed. After the completion of the treating process, the pressure in the treating vessel 4 is kept in a second pressure corresponding to a second rotating speed by changing the rotating speed of the vacuum pump 8 to a second rotating speed higher than the first rotating speed. After the inside of the treating vessel 4 becomes the second pressure, the replacement operation of the substrate in the treating vessel 4 is started. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004018922(A) 申请公布日期 2004.01.22
申请号 JP20020174439 申请日期 2002.06.14
申请人 TOKYO ELECTRON LTD 发明人 ISHIZAKA TADAHIRO;KOJIMA YASUHIKO;KAWANAMI HIROSHI;OSHIMA YASUHIRO
分类号 C23C14/56;C23C16/44;(IPC1-7):C23C14/56 主分类号 C23C14/56
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