| 发明名称 |
SDRAM structure and method of fabricating the same |
| 摘要 |
A synchronous dynamic random access memory (SDRAM) structure is provided. A stacked capacitor structure and a trench capacitor structure are integrated together within each memory cell such that the two capacitors overlap over each other to reduce overall area occupation of the SDRAM array.
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| 申请公布号 |
US2004012045(A1) |
申请公布日期 |
2004.01.22 |
| 申请号 |
US20030369077 |
申请日期 |
2003.02.13 |
| 申请人 |
LEE CHIN |
发明人 |
LEE CHIN |
| 分类号 |
H01L21/822;H01L21/8242;H01L21/84;H01L27/06;H01L27/108;H01L27/12;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/822 |
| 代理机构 |
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