Device substrate and method for producing device substrate

摘要

A device substrate is provided having: a Si(111) substrate; a buffer layer formed by epitaxial growth on the Si(111) substrate 11, and containing at least one of a rare earth metal oxide and an alkali earth metal oxide; and a semiconductor material layer formed by epitaxial growth on the buffer layer, and containing at least one of a group II-VI semiconductor material having a wurtzite structure and a group III-V semiconductor material having a wurtzite structure. The buffer layer preferably comprises a hexagonal crystal structure oriented in the (001) plane or a cubic crystal structure oriented in the (111) plane, and the semiconductor material layer preferably comprises a hexagonal crystal structure oriented in the (001) plane.