| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device of the vertical or horizontal MOSFET structure which can improve the trade-off relations between an ON resistor and a feedback capacitor and has sufficiently higher reliability. <P>SOLUTION: The semiconductor device comprises a semiconductor layer (4) of a first conductivity, a pair of base regions (6) of a second conductivity selectively formed on the surface of the semiconductor layer (4), a source region (8) of the first conductivity selectively formed on the surface of the base regions, an electric field alleviation region (20) of the second conductivity selectively formed between a pair of base regions at the surface of the semiconductor layer, a pair of gate electrodes (12) respectively provided via a gate insulation film (10) at the surface of the base regions between respective source regions and the electric field alleviation region, and a source electrode (14) connected to the source region. The electric field alleviation region is insulated for the gate electrode and source electrode via an insulation film. <P>COPYRIGHT: (C)2004,JPO |
