| 摘要 |
<P>PROBLEM TO BE SOLVED: To add p-type impurities having a desired concentration to a semiconductor layer composed of AlGaInP and a semiconductor layer composed of AlGaAs so that a high-output operation is enabled in a semiconductor light-emitting device using the semiconductor layer composed of AlGaAs and the semiconductor layer composed of AlGaInP. <P>SOLUTION: An n-type clad layer 12, an active layer 13, a first p-type clad layer 14, an etching stop layer 15, a second p-type clad layer 16, a first contact layer 17, a current block layer 19 and a second contact layer 20 are laminated successively on a substrate 11. Mg is added to the first p-type clad layer 14 composed of AlGaInP, the etching stop layer 15, the second p-type clad layer 16 and the first contact layer 17. Zn is added to the second contact layer 20 composed of GaAs as the p-type impurities. <P>COPYRIGHT: (C)2004,JPO |
