发明名称 MANUFACTURING METHOD FOR THIN FILM SUBSTRATE FOR WAVELENGTH TRANSDUCER, AND MANUFACTURING METHOD OF WAVELENGTH TRANSFORMATION ELEMENT
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a thin film substrate for a wavelength transformation element, a substrate having a uniform composition and film thickness over a large area. <P>SOLUTION: In the first process, a first and second substrates 11, 12 are superposed in a clean atmosphere, with diffusion joining performed by a heat treatment for one hour at 400°C. Then, in the second process, the first substrate 11 is polished until the thickness becomes 20μm to obtain submicron parallelism nearly over the entirety; thus, a thin film substrate suitable for the manufacture of the wavelength transformation element is prepared. Further, in the third process, by using the thin film substrate thus prepared, a periodic polarization reversing structure is produced so that phase matching conditions are fulfilled with a 1.5μm band; thus, the thin film substrate for a wavelength transformation element is manufactured. <P>COPYRIGHT: (C)2004,JPO</p>
申请公布号 JP2004020749(A) 申请公布日期 2004.01.22
申请号 JP20020173295 申请日期 2002.06.13
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 MIYAZAWA HIROSHI;YUBE MASAO;NISHIDA YOSHIKI;TADANAGA OSAMU;SUZUKI HIROYUKI
分类号 G02F1/377;(IPC1-7):G02F1/377 主分类号 G02F1/377
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