| 摘要 |
The present invention relates to a method of forming a device isolation film in a semiconductor device using a shallow trench. After the trench is formed, inert ion is implanted into a silicon substrate at upper and bottom edge portions of the trench, thus making amorphous the edge portions. The oxidization speed is increased as a reaction speed of silicon (Si) and oxygen (O2) at the amorphous portions is increased. Thus, a peel-off phenomenon at the edge portions of the trench is prevented. As a result, as a phenomenon that a gate oxide film is thinly formed at the upper edge portion of the trench is prevented, generation of the leakage current due to centralized electric field and reliability of the device is improved accordingly.
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