发明名称 Clamp circuit and boosting circuit using the same
摘要 The present invention relates to a clamp circuit and a boosting circuit using the same. In order to drop a boosting voltage to a target word line voltage, at least one or more clamp circuit is provided. At least one or more of the clamp circuits are independently driven in a desired sensing period to lower the boosting voltage. Thus, rapid read access time is accomplished upon a data read operation. Current consumption can be minimized and a stabilized word line voltage can be generated.
申请公布号 US2004012430(A1) 申请公布日期 2004.01.22
申请号 US20020329529 申请日期 2002.12.27
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM DAE HAN;KWON YI JIN
分类号 G11C16/06;G11C5/14;G11C7/00;G11C16/30;H03K5/08;H03L5/00;(IPC1-7):H03L5/00 主分类号 G11C16/06
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