发明名称 |
Semiconductor device having a flash memory cell and fabrication method thereof |
摘要 |
In a non-volatile semiconductor memory device and a fabrication method thereof, a charge storage layer is formed on a substrate. A control gate layer is formed on the charge storage layer. A gate mask having a spacer-shape is formed on the control gate layer. The charge storage layer and the control gate layer are removed using the gate mask as protection to form a control gate and a charge storage region.
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申请公布号 |
US2004014284(A1) |
申请公布日期 |
2004.01.22 |
申请号 |
US20030616391 |
申请日期 |
2003.07.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM DONG-JUN;KIM JIN-HO;LEE YONG-KYU;CHO MIN-SOO;RYU EUI-YOUL |
分类号 |
H01L21/8247;H01L27/115;H01L29/423;H01L29/788;H01L29/792;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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