| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a laminated gate structure, wherein a threshold hardly varies even if microfabrication is proceeded. SOLUTION: The device has a first gate electrode 5 formed on a first gate insulation film 4, a second gate insulation film 6 formed on the first gate electrode 5, and a second gate electrode 7 formed on the second gate insulation film 6. The first gate electrode 5 has a first part 5-1 with a first width W1 and a second part 5-2 with a width W2 which is narrower than the first width W1. A distance L from a side surface of the second part 5-2 to a side surface of an element isolation region 2 is longer than the distance from a side surface of the first part 5-1 to a side surface of the element isolation region 2. COPYRIGHT: (C)2004,JPO
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