| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device which can effectively form an upper layer wirings in different film thickness and a via plug for electrically connecting the upper layer wirings and lower layer wirings without depending on the thickness of the wiring film of the upper wirings. SOLUTION: An interlayer insulation film including lower layer wirings of the predetermined shapes is formed on a semiconductor substrate, and a first groove aperture and a first hole aperture are simultaneously formed by a half-etching method in the first photolithography process. Thereafter, a second hole aperture overlapping the first groove aperture, and a second groove aperture overlapping the second hole aperture, are simultaneously formed in the second photolithography process. Finally, the upper layer wirings and a via plug for electrically connecting the upper layer wirings and lower layer wirings are formed by filling the first and the second hole apertures with a conductor. COPYRIGHT: (C)2004,JPO
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