发明名称 Method for structuring a lithography mask
摘要 A method for structuring a lithograph mask by forming a cured, electrically-conductive layer on a mask structure having a radiation-transmissive substrate and a mask layer at least in portions of the surface of the radiation-transmissive substrate before applying a resist layer, so that during a subsequent irradiation of the resist layer by means of an electronic printing, the electrically conductive layer ensures a good charge elimination. By using a cured, electrically conductive layer, no intermixing effects between the electrically-conductive layer and the resist layer occur, and the electrically-conductive layer will be stable during subsequent development steps and not stripped off.
申请公布号 US2004013952(A1) 申请公布日期 2004.01.22
申请号 US20030465103 申请日期 2003.06.19
申请人 INFINEON TECHNOLOGIES AG 发明人 ELIAN KLAUS;VIX ARMELLE
分类号 G03F1/00;G03F7/09;(IPC1-7):G03F1/08;G03F7/20 主分类号 G03F1/00
代理机构 代理人
主权项
地址