| 摘要 |
<p>The invention relates to a method of increasing the area of a useful layer (63) of material coming from a source substrate (6) and which is effectively transferred onto a support substrate (7). The invention is remarkable in that the dimensions of the outer outline (C61, C71) of one of said source and support substrates (6 and 7), referred to as the "first" substrate (6, 7) are greater than the dimensions of the outer outline (C71, C61) of the other substrate referred to as the "second" substrate (7, 6), in that the outer outline (C6, C7) of the flat central zone (60, 70) of said first substrate (6, 7) presents dimensions greater than the dimensions of the inner outline (C7, C6) of the secondary chamfer (75, 65) of said second substrate (7, 6), and in that during bonding, the substrates (6, 7) are applied one against the other in such a manner that the inner outline (C7, C6) of the secondary chamfer (75, 65) of the second substrate (7, 6) is inscribed within the outline (C6, C7) of the flat central zone (60, 70) of the first substrate (6, 7). The invention is applicable to fabricating a composite substrate in the field of electronics, optics, or optoelectronics.</p> |
