发明名称 SOLID STATE IMAGING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a solid state imaging device in which the I/O relation of a signal is linear and fixed pattern noise is reduced. SOLUTION: A charge transfer circuit 10 comprises a transfer transistor 5a, an inverted amplifier 5b, an inverted line amplifier 12a, a negative feedback capacitor Cf, and a capacitor reset switch 12b. The inverted line amplifier 12a is set with a large open loop gain Go, and the capacitance of the negative feedback capacitor Cf is set sufficiently lower than the equivalent capacitance Cv of a photodiode 1a. The negative feedback capacitor Cf is formed by inserting an insulating film between polysilicon electrodes. Operation input voltage of the inverted line amplifier 12a is set higher than that of the inverted amplifier 5b. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004023380(A) 申请公布日期 2004.01.22
申请号 JP20020174436 申请日期 2002.06.14
申请人 NIPPON HOSO KYOKAI <NHK> 发明人 WATABE TOSHIHISA;GOTO MASAHIDE;OTAKE HIROSHI
分类号 H04N5/335;H04N5/365;H04N5/369;H04N5/374;(IPC1-7):H04N5/335 主分类号 H04N5/335
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