| 摘要 |
The present invention relates to a method of manufacturing a semiconductor device. The method includes forming a first doped polysilicon layer being a lower electrode on a semiconductor substrate, forming a Ta2O5 dielectric film using a carbon-free precursor and reaction gases, and forming an upper electrode on the dielectric film. As such, the Ta2O5 dielectric film is formed using a carbon-free precursor. The level of the leakage current is reduce, the insulating breakdown voltage is increased and reliability of the device is improved, particularly if the Ta2O5 dielectric thin film is used as an inter-poly dielectric material.
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