发明名称 Plating apparatus and method
摘要 A plating apparatus includes a plating vessel for holding a plating bath containing at least metal ions, a conveying device for conveying a long conductive substrate and immersing the long conductive substrate in the plating bath, a facing electrode disposed in the plating bath so as to face one surface of the conductive substrate, a voltage application device for performing plating on the one surface of the conductive substrate by applying a voltage between the conductive substrate and the facing electrode, and a film-deposition suppression device fixedly disposed in the plating vessel so that at least a portion of the film-deposition suppression means is close to shorter-direction edges of the conductive substrate. At least a portion of the film-deposition suppression device close to the shorter-direction edges of the conductive substrate is conductive. By holding the conductive portion of the film-deposition suppression device and the conductive substrate at substantially the same potential, film deposition on the other surface of the conductive substrate is suppressed.
申请公布号 US2004011655(A1) 申请公布日期 2004.01.22
申请号 US20030606956 申请日期 2003.06.27
申请人 TSUZUKI HIDETOSHI;TOYAMA NOBORU;TAKAI YASUYOSHI;HAYASHI RYO;SONODA YUICHI;IWATA MASUMITSU;MIYAMOTO YUSUKE 发明人 TSUZUKI HIDETOSHI;TOYAMA NOBORU;TAKAI YASUYOSHI;HAYASHI RYO;SONODA YUICHI;IWATA MASUMITSU;MIYAMOTO YUSUKE
分类号 C25D21/12;C25D5/02;C25D7/06;C25D9/08;C25D17/10;H01L31/04;(IPC1-7):C25D5/02 主分类号 C25D21/12
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