Semiconductor memory module

摘要

A substrate pad VREFT provided outside of the mold resin and word line driving voltage generation circuits within a plurality of bare chips are electrically connected only through electrical wires on a module substrate. Therefore, it becomes possible to force a voltage to the word line driving voltage generation circuits from the outside not only after the plurality of bare chips is mounted on the module substrate but also after the plurality of bare chips is integrally covered with mold resin by applying a desired voltage to the substrate pad VREFT. There is provided a semiconductor memory module capable of performing a test for a semiconductor chip after the semiconductor chip is mounted on a module substrate.