NONVOLATILE MEMORY AND ITS MANUFACTURING METHOD

摘要

A nonvolatile memory comprising first and second electrodes (11, 12) and a phase-change recording body (14) interposed between the first and second electrodes (11, 12) and having a resistance variable when an electric pulse is applied between the first and second electrodes (11, 12), wherein at least one of the first and second electrodes (11, 12) contains as a major component at least one kind of ruthenium, rhodium, and osmium, and the phase-change recording body (14) is made of a phase-change material containing a chalcogen element. The nonvolatile memory is free of characteristic degradation (namely, mutual diffusion of impurities between the electrodes and phase-change recording body) due to current application, thus enhancing the durability and reliability.