MAGNETIC NON-VOLATILE MEMORY ELEMENT

摘要

A magnetic non-volatile memory element having a sufficient magnetic shield effect against an external magnetic field. A first and a second magnetic shield layer (60a, 60b) are formed by using soft magnetic metal on the lower surface of a transistor section (20) of the mounting side of an MRAM element (10) and on the upper surface of the bit line (50) of the side opposite to the element mounting side, respectively. A passivation film (70) is formed on the second magnetic shield layer (60b). Thus, a magnetic flux coming from an external magnetic field is suppressed to or below the inverting magnetic field intensity of the MRAM element (10), thereby improving reliability. Furthermore, by using soft magnetic metal for the shield layers (60a, 60b), formation is enabled by using the sputter method. If this soft magnetic metal is partially common to the target element forming the layers of the MRAM element, it is possible to effectively form the magnetic shield layers (60a, 60b) by using the same sputter device used for the layers of the MRAM element (10).