SEMICONDUCTOR DEVICE AND ITS MANUFACTURING PROCESS

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having an easy-to-fabricate capacitor element in which electric characteristics can be enhanced.

SOLUTION: After the surface of a semiconductor substrate 7 on which a transistor 3, and the like, are formed is coated with an interlayer insulation film 6, a lower electrode 11a for a capacitor is formed of ruthenium. A layer 15 of an Sr oxide forming the site A of perovskite structure is provided to cover the exposed surface of the lower electrode 11a. A first layer STO film 17a composed of a metal oxide having perovskite structure and becoming the underlying dielectric film 16a of the capacitor dielectric film 16 is formed to cover the exposed surface of the Sr oxide layer 15. A second layer STO film 17b becoming the overlying dielectric film 16b is formed to cover the exposed surface of the STO film 17a. An upper electrode 11b for capacitor is then formed of ruthenium on the exposed surface of the overlying dielectric film 16b, thus fabricating the capacitor element 10.

COPYRIGHT: (C)2004,JPO