| 摘要 |
PROBLEM TO BE SOLVED: To realize a nitride semiconductor element, wherein an alumina film having proper dielectric characteristics, similar to that of conventional silicon oxide films or silicon nitride films, and a characteristic that a lateral selective growth rate of a nitride semiconductor layer grown on the alumina film is high is used; the production process of the device is easy; and the performance of the device is high. SOLUTION: A nitride semiconductor device is constituted of a nitride semiconductor layer (for example, GaN layer 2) produced on a substrate 1; an alumina mask (alumina film) 3a formed on the nitride semiconductor layer; and a nitride semiconductor layer formed on the nitride semiconductor layer and on the alumina mask 3a. For the substrate 1, any one among sapphire, silicon carbide, silicon, or gallium nitride is used; and the nitride semiconductor layer includes at least one selected from among gallium nitride, aluminum nitride, or indium nitride. COPYRIGHT: (C)2004,JPO
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