SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which can stably start an internal power source potential when turning on an external power source potential and is small in a standby current. SOLUTION: An internal power source potential generating circuit 50 of an SDRAM (Synchronous Dynamic Random Access Memory) includes a standby VDDS generating circuit 55 having a relatively small driving power to form the internal power source potential VDDS and an active VDDS generating circuit 57 having a relatively small current driving power to form the internal power source potential VDDS by being activated in the period when the external power source potential VDDH is turned on before the period when the negative potential VBB attains -0.5V. Accordingly, the internal power source potential VDDS can be stably started when turning on the power source without increasing a standby current. COPYRIGHT: (C)2004,JPO