发明名称 PROCESS FOR MACHINING THIN SILICON WAFER
摘要 PROBLEM TO BE SOLVED: To provide a process for machining a single crystal wafer into a thin silicon wafer 1 in which cracking, or the like, starting from the tapered peripheral can be prevented while facilitating handling of the silicon wafer. SOLUTION: A plurality of silicon wafers 1 having a bevel 2 at the peripheral part are stacked and the bevels 2 at the peripheral part are ground collectively. Subsequently, the surface of individual silicon wafers is back ground to produce a thin silicon wafer 10. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004022899(A) 申请公布日期 2004.01.22
申请号 JP20020177430 申请日期 2002.06.18
申请人 SHINKO ELECTRIC IND CO LTD 发明人 MASHINO NAOHIRO
分类号 H01L21/304;B24B1/00;B24B7/22;B24B9/00;H01L21/02;H01L21/302;H01L21/68;H01L21/683;(IPC1-7):H01L21/304 主分类号 H01L21/304
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