| 摘要 |
An electron beam exposure mask which makes it possible to reduce the number of times of exchange and to shorten the exposure time, is disclosed. The electron beam exposure mask (10) comprises at least two each of one or at least two kinds of exposure regions, for example, three kinds of exposure regions consisting of hole layer exposure regions (A), wiring layer exposure regions (B), and gate layer exposure regions (C). By this, at the time of conducting exposure by use of each exposure region, it suffices to move the exposure region to a predetermined exposure position, and it is unnecessary to exchange the electron beam exposure mask (10) by taking it out of the electron beam exposure device. Further, since at least two each of each kind of exposure regions are provided, an exposure region stained during use can be substituted with another exposure region, so that the number of times of cleaning of the electron beam exposure mask (10) is reduced, and the number of times of exchange of the electron beam exposure mask (10) can be reduced. Therefore, the exposure time in a lithography step can be shortened.
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