| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a side channel thin-film transistor (TFT), capable of simultaneously and collectively forming three electrodes of source, drain and gate, its manufacture and a flat panel display device. <P>SOLUTION: The source electrode 4 provided on an insulation substrate 1, the gate electrode 3, the drain electrode 5, a gate insulation film 6 provided on the upper surface and side surface of the gate electrode 3, a semiconductor layer or a p-Si layer 7 provided on the source electrode 4, the gate insulation film 6 and the drain electrode 5, and a channel unit 8, provided in a part of the p-Si layer 7 on the right side surface of the gate electrode 3 are provided on the device. <P>COPYRIGHT: (C)2004,JPO</p> |
