| 摘要 |
A laser diode that has a pluality of semiconductor epitaxial layers grown on a substrate. The diode includes a light generating layer located between two layers of n-type material. A thin layer of p-type material is interposed between the active layer and an n-type layer. The Diode includes a layer of n-doped material located adjacent to a substrate. The laser diode further includes an active layer located between the n-doped layer and a layer of p-doped material. An additional layer of n-doped material is located between the p-doped material and a contact. The contact is biased so as to induce a recombination of holes and electrons in the active region and generate light. The light travels along the active layer, p-doped layer and in both n-doped layers. Having an n-doped layer between the contact and p-doped layer reduces the amount of photon absorption within the laser diode. This improves the energy efficiency, current requirements and the ultimate life of the laser diode. The adjacent p-doped and n-doped layers include heavily doped tunnel layers that allow a tunnel current to flow even though the junction between these layers is reverse biased.
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