| 摘要 |
A method of removing photoresist and/or resist residue from a substrate includes exposing the substrate to a supercritical fluid in combination with a co-solvent mixture comprising an organic solvent and an oxidizer. In one embodiment, the supercritical fluid is supercritical carbon dioxide and the co-solvent mixture includes 1,2-Butylene Carbonate, Dimethyl Sulfoxide and hydrogen peroxide. If desired, supercritical carbon dioxide in combination with a second co-solvent mixture may be subsequently applied to the substrate to rinse and dry the substrate. In one embodiment, the second co-solvent mixture includes isopropyl alcohol.
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