发明名称 |
Shallow trench isolation structure and method |
摘要 |
Disclosed is a shallow trench isolation (STI) structure and methods of manufacturing the same. The methods eliminate the requirement for design size adjustments (DSA) in manufacturing the STI structure. Further disclosed is an STI trench liner and methods for the formation thereof by growing a thin oxide layer on shallow isolation trench surfaces while preventing oxide formation on adjacent nitride surfaces, followed by the deposition of, and oxide growth upon, a polysilicon layer.
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申请公布号 |
US2004014291(A1) |
申请公布日期 |
2004.01.22 |
申请号 |
US20020196089 |
申请日期 |
2002.07.16 |
申请人 |
MEHRAD FREIDOON;CHEN ZHIHAO;EKBOTE SHASHANK S.;TRENTMAN BRIAN |
发明人 |
MEHRAD FREIDOON;CHEN ZHIHAO;EKBOTE SHASHANK S.;TRENTMAN BRIAN |
分类号 |
H01L21/762;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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