| 摘要 |
In a photosensitive imaging chip, such as employing CCD or CMOS technology, each photosite is electrically isolated from other structures on the chip by a trench. The trench extends through an epitaxial layer of the chip and intersects a heavily-doped substrate layer of the chip by at least 1 mum. The trench can be formed by plasma etching, and filled with polysilicon.
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