| 发明名称 |
Semiconductor device with capacitor and process for manufacturing the device |
| 摘要 |
A semiconductor device includes a first insulating film comprising an opening, a capacitor formed at a selected position in the opening, a second insulating film formed at least in the opening, and a third insulating film formed on the second insulating film.
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| 申请公布号 |
US2004014331(A1) |
申请公布日期 |
2004.01.22 |
| 申请号 |
US20030619394 |
申请日期 |
2003.07.15 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
YOSHITOMI TAKASHI;NAKASHIMA YUICHI |
| 分类号 |
H01L23/52;H01L21/02;H01L21/304;H01L21/311;H01L21/316;H01L21/3205;H01L21/3213;H01L21/768;H01L21/822;H01L27/04;(IPC1-7):H01L29/00 |
主分类号 |
H01L23/52 |
| 代理机构 |
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