<p>A composition for antireflection film formation which comprises a urea compound substituted by hydroxyalkyl or alkoxyalkyl and preferably contains a light-absorbing compound and/or light-absorbing resin; a method of forming an antireflection film for a semiconductor device, which comprises using the composition; and a process for producing a semiconductor device, which comprises using the composition. The composition satisfactorily absorbs light having wavelengths for use in semiconductor device production. The composition is hence highly effective in eliminating reflected light. It further has a higher dry-etching rate than photoresist layers.</p>
申请公布号
WO2004008253(A1)
申请公布日期
2004.01.22
申请号
WO2003JP08832
申请日期
2003.07.11
申请人
NISSAN CHEMICAL INDUSTRIES, LTD.;KISHIOKA, TAKAHIRO;ARASE, SHINYA;MIZUSAWA, KEN-ICHI;NAKAYAMA, KEISUKE