FILM FORMING METHOD AND FILM FORMING APPARATUS

摘要

A method for forming a film characterized by comprising the steps of growing a metal film to serve as a lower electrode of a capacitor in a film-forming region on a substrate to be processed, heating the substrate at 350 to 500°C in a non-oxidizing atmosphere, growing a dielectric film in a film-forming region on the metal film, and heat-treating the substrate at 600°C or more. The crystalline grains of the metal film to serve as an underlying film of the dielectric film grows and comes into a stable state by a preliminary heat treatment, and the growth of the crystalline grain is prevented during the heat treatment. Therefore, no defect occurs in the brittle dielectric film, and a high-quality dielectric film can be formed.