| 摘要 |
A member for a semiconductor device which has, as a base material (1), an alloy or a composite material comprising Cu and W and/or Mo as a main component, an alloy or a composite material comprising Al-SiC as a main component, and an alloy or a composite material comprising Si-SiC as a main component, and also has a coating layer comprising a hard carbon film (2) formed on the surface of the base material (1) for the joining by the use of a resin of at least another member such as a package. The base material (1) preferably has a surface roughness of 0.1 to 20 .mu.m in terms of Rmax, and the hard carbon film (2) preferably has a thickness of 0.1 to 10 .mu.m. The above member for a semiconductor device, such as a substrate, is improved in the joining strength in joining with a resin and is capable of retaining hig h strength in joining with a resin after a reliability test such as a temperature cycle test, that is, exhibits excellent characteristics for the joining with a resin.
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