SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device wherein resistance is low and a destruction tolerance is improved.

SOLUTION: The semiconductor device 2 is provided with an n--type base layer 42, a p+-type contact layer 50 formed selectively above the n--type base layer 42, an n+-type source layer 48 formed selectively so as to insert the p+-type contact layer 50, a trench TR which is in contact with the n+-source layer 48 and formed with a depth reaching the inside of the n--type base layer 42, a gate electrode 54 formed via a gate oxide film 52 inside the trench TR, an emitter electrode 58 formed so as to be in contact with the p+-type contact layer 50 and the n+-type source layer 48, a p+-type emitter layer 44 formed on a surface on a side opposite to the emitter electrode 58 of the n--type base layer 42, and a collector electrode 56 in contact with the p+-type emitter layer 44. In the semiconductor device 2, an n-type barrier layer 46 having impurity density higher than that of the n--type base layer 42 is provided between the p+-type contact layer 50, the n+-type source layer 48 and the n--type base layer 42.

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