| 摘要 |
PROBLEM TO BE SOLVED: To enable stable power for driving a gate of a semiconductor switching element or the like for constituting a power converter to be supplied while the semiconductor switching element or the like is protected from an overvoltage breakdown. SOLUTION: A voltage of both ends of, for example, an IGBT (insulated gate type bipolar transistor) Q1 as the semiconductor switching element is divided by capacitors C1, C2 or the like, the divided voltages are converted into current and voltage necessary to drive the gate of the IGBT Q1 by a DC-DC converter E1 to thereby enable the gate of the IGBT Q1 via a gate drive circuit F1 to be driven. COPYRIGHT: (C)2004,JPO
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