| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is provided with a resistor element capable of reducing a variation in resistivity with a temperature. SOLUTION: The resistor element is formed of a polycystalline SiGe thin film in which the content of Ge atoms is 20-50% and an impurity is doped so that resistivity is 3×10<SP>-2</SP>to 3×10<SP>-1</SP>Ωcm. In a resistivity range lower than 3×10<SP>-1</SP>Ωcm, since the temperature coefficient of resistivity (TCR) is smaller in the polycrystalline SiGe (Ge:20%) than that in polycrystalline Si, a variation in resistivity with a temperature is reduced. COPYRIGHT: (C)2004,JPO
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