| 摘要 |
A non-volatile semiconductor memory device of the present invention has: a memory cell array that includes multiple twin memory cells arrayed in both a row direction and a column direction; an address generation circuit that generates multiple addresses sequentially varying from a specified address; an access control circuit that regulates operations of at least multiple word lines and multiple bit lines according to the multiple addresses generated by the address generation circuit, so as to control a reading operation of information; and a detection circuit that detects information read via the multiple bit lines. In the process of selecting the sequentially varying multiple addresses to read information from non-volatile memory elements corresponding to the multiple addresses, the access control circuit causes plural non-volatile memory elements arrayed in the column direction on a preset column to be selected sequentially according to the varying multiple addresses, among the multiple non-volatile memory elements arrayed in the row direction and in the column direction. This arrangement actualizes the non-volatile semiconductor memory device of twin memory cells having the function of reading data in a burst mode.
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