| 摘要 |
The invention relates to a tetragonal single crystal (1, 11) of composition: Z(H,D)2MO4 where Z is an element or a group of elements, or a mixture of elements and/or of groups of elements chosen from the group K, N(H,D)4, Rb, Ce where M is an element chosen from the group P, As and where (H,D) is hydrogen and/or deuterium comprising an approximately parallelepipedal region of large dimensions, especially one in which the length of each of the edges of the faces, AC1, AC2, AC3, is greater than or equal to 200 mm, in particular greater than or equal to 500 mm, which crystal is obtained by crystal growth from solution, from an approximately parallelepipedal single-crystal seed (2, 22) whose edges of the faces have lengths of AG1, AG2, AG3. According to the invention, at least the length of one edge, AG1, of the seed is greater than or equal to one tenth, preferably one quarter, of the length of one edge of the faces of the single crystal and at least one other length of the seed, AG3, is less than or equal to one fifth, preferably one tenth, of the greatest length of the edges of the faces of the seed. The invention also relates to the process which allows such tetragonal single crystals to be obtained. Such single crystals are particularly beneficial for obtaining optical components, especially for laser applications.
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