发明名称 |
HARD MASK PROCESS FOR MEMORY DEVICE WITHOUT BITLINE SHORTS |
摘要 |
A manufacturing method for a MirrorBit(R) Flash memory includes providing a semiconductor substrate and depositing a charge-trapping dielectric layer. First and second bitlines are implanted and a wordline layer is deposited. A hard mask layer is deposited over the wordline layer. The hard mask is of a material formulated for removal without damaging the charge-trapping dielectric layer. A photoresist is deposited over the wordline layer and used to form a hard mask. The photoresist is removed. The wordline layer is processed using the hard mask to form a wordline and the hard mask is removed. A salicide is grown without short-circuiting the first and second bitlines.
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申请公布号 |
US2004014290(A1) |
申请公布日期 |
2004.01.22 |
申请号 |
US20020100485 |
申请日期 |
2002.03.14 |
申请人 |
YANG JEAN Y.;RAMSBEY MARK T.;SHIRAIWA HIDEHIKO;WU YIDER;LINGUNIS EMMANUIL;KAMAL TAZRIEN |
发明人 |
YANG JEAN Y.;RAMSBEY MARK T.;SHIRAIWA HIDEHIKO;WU YIDER;LINGUNIS EMMANUIL;KAMAL TAZRIEN |
分类号 |
H01L21/8246;H01L27/115;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/8246 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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