| 摘要 |
<P>PROBLEM TO BE SOLVED: To establish an electrical connection between a capacitive element, which includes a capacitive film comprising an upside ferroelectric or highly dielectric material, and a contact plug, by converting a predetermined region of a hydrogen barrier film into a conductive hydrogen barrier layer, without etching a fine contact hole in the hydrogen barrier film which resists microprocessing. <P>SOLUTION: An interlayer insulating film 3 is formed on a substrate 2, including a conductive layer 1 formed in advance and, in the interlayer insulating film 3, a contact hole 4 is formed, and is filled up with a contact plug 5. A conductive hydrogen barrier film 6 is formed on the contact plug 5, and a mask 7 made of an oxidation-resisting material is formed thereon. The surface of the substrate 2 with the mask 7 formed thereon is subjected to heat treatment in an oxygen-containing atmosphere, and this oxidizes a predetermined region of the conductive hydrogen barrier film 6 for the conversion of at least a part of the region in contact with the contact plug 5 into a conductive hydrogen barrier layer 8. An insulating hydrogen barrier layer 9 is formed, except for the part converted into the conductive hydrogen barrier layer 8 and, next, the mask 7 is removed, and then a capacitive element is formed on the conductive hydrogen barrier layer 8. <P>COPYRIGHT: (C)2004,JPO |
