EPITAXIAL SUBSTRATE AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To enable a device formed of a semiconductor device comprising a semiconductor layer group made of a group III nitride to have enough device characteristics. SOLUTION: An underlying layer 2 of the group III nitride containing at least Al is formed on a prescribed single crystal substrate 1, and a first semiconductor layer 3 of the group III nitride containing at least Al and a second semiconductor layer 12 are formed on the underlying layer 2. The sheet carrier concentration and mobility of the semiconductor layer group 14 composed of the first semiconductor layer 3 and the second semiconductor layer 12 at room temperatures are set at 5×1012/cm2or above and 1300cm2/(Vs) or above, respectively. COPYRIGHT: (C)2004,JPO