| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device including a highly reliable insulating film for a capacitor. SOLUTION: The manufacturing method of a semiconductor device comprises a wiring formation process. The wiring formation process comprises a capacitor formation process for depositing a lower electrode metal for a capacitor, an insulating film, and an upper electrode metal in this order after a transistor is formed for patterning the upper electrode metal to form an upper electrode, and then patterning an electrode metal to form a lower electrode, and hence for forming a capacitor; and a contact hole formation process for forming a contact hole in the capacitor and an interlayer film by depositing the interlayer film on the capacitor. COPYRIGHT: (C)2004,JPO
|
