发明名称 Batch type atomic layer deposition apparatus and in-situ cleaning method thereof
摘要 The present invention provides a batch type atomic layer deposition. Particularly, the batch type ALD apparatus and an in-situ cleaning method thereof supplies a cleaning gas to a central region of an upper plate in a radial form, thereby improving an efficiency on the in-situ cleaning of the batch type ALD apparatus.
申请公布号 US2004011286(A1) 申请公布日期 2004.01.22
申请号 US20030615062 申请日期 2003.07.08
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KWON HYUG-JIN
分类号 H01L21/203;C23C16/44;C23C16/48;(IPC1-7):C23C16/00 主分类号 H01L21/203
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