| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device for power which eliminates a fault caused by a bonding wire and in which the number of parts is small and of which manufacture is simple. <P>SOLUTION: In the semiconductor device for power having a paired arm structure consisting of an anode side circuit and a cathode side circuit, a first metal block 1a is connected to the rear surfaces of a plurality of first semiconductor elements, a second metal block 1b is connected to the rear surfaces of a plurality of second semiconductor elements, the front surfaces of the first and the second semiconductor elements are connected to first and second metal blocks via lead frame 13, the first and second semiconductor elements, the first and the second metal blocks and the lead frame are integrally covered with a housing, and the first and the second metal blocks constitute a part of a main electrode in which main current flows, and main electrode and the control electrode formed of the lead frame in the housing are disposed on substantially flat surface except the connecting part to the first, second semiconductor elements and the first and second metal blocks. <P>COPYRIGHT: (C)2004,JPO |
