SEMICONDUCTOR DEVICE, PRODUCTION METHOD AND PRODUCTION DEVICE THEREOF

摘要

A semiconductor device capable of forming a gate insulation structure having the interface between a quality silicon oxide film and silicon at the interface between a high-permittivity thin film and a silicon substrate, and promoting an improvement in interfacial electric characteristics that must be attained for the practical use of a high-permittivity insulation film; and a semiconductor production method. After a substrate silicon oxide film (103) is formed on the surface of a silicon substrate (101), metal elements are diffused into the silicon oxide film (103) by a metal layer depositing step for supplying high-permittivity-film-constituting metal elements onto the surface of the film (103) and by a heat-treating step to thereby form an insulation film structure (105) containing a silicate region as a gate insulation film. The silicate region-containing structure (105) consists of a silicon oxide film region, a silicate region and a metal-rich region to form a silicate structure having the composition change of being higher in metal composition toward the upper portion and higher in silicon composition toward the lower portion.